Electrical Characterization of W/HfO2 MOSFET with La2O3 Incorporation
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منابع مشابه
Study of Lanthanum incorporated HfO2 nano-scale high-κ dielectric using Pulse Laser Deposition for metal–insulator–metal capacitor applications
Studies of Metal–insulator–metal (MIM) capacitors having high-κ La2O3\HfO2 dielectric stacks are fabricated using Pulse Laser Deposition (PLD) is carried out. Nano-sized La2O3\HfO2 dielectric stacks are deposited using PLD system under optimized pressure, substrate temperature and numbers of shots inside argon ambient chamber. The morphology of dielectric stacks is examined using AFM and the th...
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Metal–insulator–metal (MIM) capacitors have been fabricated using high-κ La2O3\HfO2 dielectric stacks deposited using Dense Plasma Focus (DPF) and were subsequently studied. DPF is a unique machine used for the very first time to fabricate dielectric stacks within a MIM structure as it can be used both to deposit nano-size thin film as well as can also be used to change the properties of the po...
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Abstract—The origin of negative flat-band shift using La2O3 incorporation in HfO2 dielectrics has been extensively examined. From careful extraction of effective work function of gate electrode and fixed charges at each interface, it has been revealed that La2O3 at high-k/Si substrate or high-k/SiO2 interface has either large amount of positive fixed charges or an additional dipole of 0.36 V co...
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Using a W-La2O3 gated MOSFET structure, we report the effect of substrate and gate injection of electrons on the breakdown and electrical degradation characteristics of the gate stack. Using the carrier separation measurement technique, we are able to identify the major contributor to leakage current under various stress conditions. By stressing nand p-channel MOSFETs with positive and negative...
متن کاملEffect of film properties for non-linear DPL model in a nanoscale MOSFET with high-k material: ZrO2/HfO2/La2O3
http://dx.doi.org/10.1016/j.spmi.2015.03.060 0749-6036/ 2015 Elsevier Ltd. All rights reserved. ⇑ Corresponding author at: Mechanical Engineering Department, Amirkabir University of Technology, 424 Hafez Ave Box 15875-4413, Tehran, Iran. Tel.: +98 (24)33054142. E-mail addresses: [email protected] (Z. Shomali), [email protected] (J. Ghazanfarian), abbassi@au Abbassi). Zahra Shomali ...
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تاریخ انتشار 2009